Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces.

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Physical Review Letters. 1993 Oct 4;71(14):2280-83

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Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces. Harris Lab

Hines M, Chabal Y, Harris TD, Harris A

Note: Research in this publication was not performed at Janelia.

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Abstract

Polarized angle-resolved Raman spectra of the Si-H stretching vibrations on stepped H-terminated Si(111) surfaces confirm the constrained orientation of the step dihydride derived from ab initio cluster calculations. They further show that the step normal modes involve little concerted motion of the step atoms, indicating that step relaxation reduces the steric interaction much further than predicted.

PMID: 10054633 [PubMed - indexed for MEDLINE]

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Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces.

Note: Research in this publication was not performed at Janelia.

Abstract

PMID: 10054633 [PubMed - indexed for MEDLINE]